Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
From inside the book
Results 1-3 of 81
Page 49
... compounds at the target surface is far faster than the rate of compound formation at the target surface . However , as the reactive gas partial pressure is increased and / or the target sputtering rate is decreased , a threshold is ...
... compounds at the target surface is far faster than the rate of compound formation at the target surface . However , as the reactive gas partial pressure is increased and / or the target sputtering rate is decreased , a threshold is ...
Page 361
... Compounds for Glow Discharge Polymerization B. Nitrogen - Containing Compounds 375 377 378 379 C. Fluorine - Containing Compounds D. Oxygen - Containing Compounds 379 380 E. Si - Containing Compounds F. Compounds Containing Other ...
... Compounds for Glow Discharge Polymerization B. Nitrogen - Containing Compounds 375 377 378 379 C. Fluorine - Containing Compounds D. Oxygen - Containing Compounds 379 380 E. Si - Containing Compounds F. Compounds Containing Other ...
Page 381
... compounds are generally poor starting materials for glow discharge polymerization . The deposition rate of polymers is generally much smaller than that of nonoxygen - containing compounds of similar molec- ular weight [ 76 ] . When ...
... compounds are generally poor starting materials for glow discharge polymerization . The deposition rate of polymers is generally much smaller than that of nonoxygen - containing compounds of similar molec- ular weight [ 76 ] . When ...
Other editions - View all
Common terms and phrases
Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York