Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 197
... condensed in the region not exposed to Ng ( only 2-3 wt % N in Si ) . These results show that in this dual beam ... condensing Si atoms and local rearrange- ment . Films prepared by the dual beam technique display the same elec- trical ...
... condensed in the region not exposed to Ng ( only 2-3 wt % N in Si ) . These results show that in this dual beam ... condensing Si atoms and local rearrange- ment . Films prepared by the dual beam technique display the same elec- trical ...
Page 264
... condensed constituents of the system : AG , is the standard free energy of formation of a compound and AG ; = 0 for all elements in their standard state . The free energy of some chemical reaction ( AG ; ) can be calculated if the AG ...
... condensed constituents of the system : AG , is the standard free energy of formation of a compound and AG ; = 0 for all elements in their standard state . The free energy of some chemical reaction ( AG ; ) can be calculated if the AG ...
Page 511
... condensed before reaching the pump . Most plasma etching processes permit a reasonable latitude in pressure ; however , with the variety of gases often employed , it is desir- able to have pressure measuring instrumentation which is ...
... condensed before reaching the pump . Most plasma etching processes permit a reasonable latitude in pressure ; however , with the variety of gases often employed , it is desir- able to have pressure measuring instrumentation which is ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min