Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 41
... contamination . A. Target Materials While it is possible to use virtually any kind of material as a sputtering target , for high purity work very dense targets are preferred . Sputtering can and has been done successfully from sintered ...
... contamination . A. Target Materials While it is possible to use virtually any kind of material as a sputtering target , for high purity work very dense targets are preferred . Sputtering can and has been done successfully from sintered ...
Page 411
... contamination as related to etching can be considered from two aspects : ( 1 ) initially present contaminants and their removal prior to etching , and ( 2 ) residual contaminants arising from etching treatments and their removal as a ...
... contamination as related to etching can be considered from two aspects : ( 1 ) initially present contaminants and their removal prior to etching , and ( 2 ) residual contaminants arising from etching treatments and their removal as a ...
Page 412
... contamination of GaAs has been reviewed by Stir- land and Straughan [ 23 ] . Meek [ 78 ] used Rutherford ion backscattering of high - energy ions as a sensitive surface analysis tool to determine the im- purities left on clean Si ...
... contamination of GaAs has been reviewed by Stir- land and Straughan [ 23 ] . Meek [ 78 ] used Rutherford ion backscattering of high - energy ions as a sensitive surface analysis tool to determine the im- purities left on clean Si ...
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Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York