Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 149
... DENSITY ( mA / cm2 ) 700 600 ARGON 500 400 300 200 2 40 60 80 average cathode current density mA / cm2 6 8 10 ៣៩ ៩៩ 8 60 30 20 10 PRESSURE ( mTorr ) Fig . 9. ( a ) Current - voltage characteristics for rectangular planar magnetron ...
... DENSITY ( mA / cm2 ) 700 600 ARGON 500 400 300 200 2 40 60 80 average cathode current density mA / cm2 6 8 10 ៣៩ ៩៩ 8 60 30 20 10 PRESSURE ( mTorr ) Fig . 9. ( a ) Current - voltage characteristics for rectangular planar magnetron ...
Page 155
... density ( total power divided by erosion area ) would be a safer number to use than the average power density ( total power divided by tar- get area ) . A stress - free low thermal expansion material such as fused quartz can support a ...
... density ( total power divided by erosion area ) would be a safer number to use than the average power density ( total power divided by tar- get area ) . A stress - free low thermal expansion material such as fused quartz can support a ...
Page 241
... density for any given electrolysis . If the potential is increased further , some new process such as H2 evolu- tion may begin and the current may rise again . Thus , if the limiting current density is exceeded , deposits tend to be ...
... density for any given electrolysis . If the potential is increased further , some new process such as H2 evolu- tion may begin and the current may rise again . Thus , if the limiting current density is exceeded , deposits tend to be ...
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Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York