Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
From inside the book
Results 1-3 of 96
Page 149
... DENSITY ( mA / cm2 ) 700 600 ARGON 500 400 300 200 2 40 60 80 average cathode current density mA / cm2 6 8 10 10 5 888 60 30 20 PRESSURE ( mTorr ) Fig . 9. ( a ) Current - voltage characteristics for rectangular planar magnetron cathode ...
... DENSITY ( mA / cm2 ) 700 600 ARGON 500 400 300 200 2 40 60 80 average cathode current density mA / cm2 6 8 10 10 5 888 60 30 20 PRESSURE ( mTorr ) Fig . 9. ( a ) Current - voltage characteristics for rectangular planar magnetron cathode ...
Page 155
... density ( total power divided by erosion area ) would be a safer number to use than the average power density ( total power divided by tar- get area ) . A stress - free low thermal expansion material such as fused quartz can support a ...
... density ( total power divided by erosion area ) would be a safer number to use than the average power density ( total power divided by tar- get area ) . A stress - free low thermal expansion material such as fused quartz can support a ...
Page 241
... density for any given electrolysis . If the potential is increased further , some new process such as H2 evolu- tion may begin and the current may rise again . Thus , if the limiting current density is exceeded , deposits tend to be ...
... density for any given electrolysis . If the potential is increased further , some new process such as H2 evolu- tion may begin and the current may rise again . Thus , if the limiting current density is exceeded , deposits tend to be ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
10 other sections not shown
Other editions - View all
Common terms and phrases
Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min