Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 368
... dependent . Conse- quently , polymer deposition rates are dependent on the ratio of surface to volume of glow . Therefore , other operational parameters such as flow rate , system pressure , and discharge power are insufficient ...
... dependent . Conse- quently , polymer deposition rates are dependent on the ratio of surface to volume of glow . Therefore , other operational parameters such as flow rate , system pressure , and discharge power are insufficient ...
Page 516
... dependent on the mask and underlying substrate composition , the rates for a wide variety of which have been ... dependent on the atomic weight of the incident ion [ 56 ] and ion etching rates have also been found to be markedly ...
... dependent on the mask and underlying substrate composition , the rates for a wide variety of which have been ... dependent on the atomic weight of the incident ion [ 56 ] and ion etching rates have also been found to be markedly ...
Page 549
... dependent on the purity and electronic structure of the gate oxide which can be degraded by inappro- priate processing . The degree and type of damage are dependent both on the device structure being ion etched and the plasma ...
... dependent on the purity and electronic structure of the gate oxide which can be degraded by inappro- priate processing . The degree and type of damage are dependent both on the device structure being ion etched and the plasma ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min