Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 150
... Determining Deposition Rate Sputtering rates are determined primarily by the ion - current density at the target and secondarily by the ion energy ( voltage ) . In practice , for magnetron sputtering , deposition rates have been found ...
... Determining Deposition Rate Sputtering rates are determined primarily by the ion - current density at the target and secondarily by the ion energy ( voltage ) . In practice , for magnetron sputtering , deposition rates have been found ...
Page 267
... determined by the composition of the chlorosilane - hydrogen input mixture . Table II shows results of calculations ... determine the total quantity of Si in the vapor phase and compare it with the input amount . The difference specifies ...
... determined by the composition of the chlorosilane - hydrogen input mixture . Table II shows results of calculations ... determine the total quantity of Si in the vapor phase and compare it with the input amount . The difference specifies ...
Page 529
... determined from Eq . ( 7 ) by setting AwN 0. Equation ( 7 ) shows that the reciprocal etch rate ( or Ro / R ) is proportional to N as demonstrated in Fig . 15 , for example . This linear re- lation allows the etch rate for any load size ...
... determined from Eq . ( 7 ) by setting AwN 0. Equation ( 7 ) shows that the reciprocal etch rate ( or Ro / R ) is proportional to N as demonstrated in Fig . 15 , for example . This linear re- lation allows the etch rate for any load size ...
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Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York