Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 312
... device performance . Practically all of the listed processes belong to one of the following three methods : ( 1 ) ... devices . E. Miscellaneous Compound Semiconductors Table VII lists CVD films of semiconductors not discussed so far [ 137 ...
... device performance . Practically all of the listed processes belong to one of the following three methods : ( 1 ) ... devices . E. Miscellaneous Compound Semiconductors Table VII lists CVD films of semiconductors not discussed so far [ 137 ...
Page 316
... devices [ 340-346 ] . The latter may serve as a specific example . Tungsten films have been deposited at 700 ° C on ... device technology . Transparent conduc- tors prepared by CVD are , besides polycrystalline Si , certain metal oxides ...
... devices [ 340-346 ] . The latter may serve as a specific example . Tungsten films have been deposited at 700 ° C on ... device technology . Transparent conduc- tors prepared by CVD are , besides polycrystalline Si , certain metal oxides ...
Page 549
... device structure being ion etched and the plasma environment to which it is exposed . It is well known that MOS ... device degradation if they are permitted to impinge directly onto the gate oxide . Less susceptible are devices where the ...
... device structure being ion etched and the plasma environment to which it is exposed . It is well known that MOS ... device degradation if they are permitted to impinge directly onto the gate oxide . Less susceptible are devices where the ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min