Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 250
... dielectric constant is no criterion . Diethyl ether , with a dielectric con- stant of only 4.5 , is a much better solvent for electrodeposition than HCN , with a dielectric constant of 95 ( water = 80 ) . Conductivity of the solvent is ...
... dielectric constant is no criterion . Diethyl ether , with a dielectric con- stant of only 4.5 , is a much better solvent for electrodeposition than HCN , with a dielectric constant of 95 ( water = 80 ) . Conductivity of the solvent is ...
Page 413
... Dielectrics 1. General Considerations Important insulating and dielectric materials include grown and depos- ited vitreous and crystalline oxides , chemically vapor - deposited ( CVD ) binary silicates , fused multicomponent silicate ...
... Dielectrics 1. General Considerations Important insulating and dielectric materials include grown and depos- ited vitreous and crystalline oxides , chemically vapor - deposited ( CVD ) binary silicates , fused multicomponent silicate ...
Page 414
... dielectric compounds , being amorphous or extremely microcrystalline , are classified as glasses . Therefore , etch- ing in these cases proceeds isotropically , and variations in the etch rate of a specific material in a given etchant ...
... dielectric compounds , being amorphous or extremely microcrystalline , are classified as glasses . Therefore , etch- ing in these cases proceeds isotropically , and variations in the etch rate of a specific material in a given etchant ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min