Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 44
... effect to preform an inter- face during sputter etching prior to film deposition . For example , ohmic contacts to Si devices have been improved by sputter etching the Si sub- strate with a Pt backing plate to produce PtSi in the ...
... effect to preform an inter- face during sputter etching prior to film deposition . For example , ohmic contacts to Si devices have been improved by sputter etching the Si sub- strate with a Pt backing plate to produce PtSi in the ...
Page 45
... effect been put to beneficial use in the coating of the inside walls of through holes in substrates [ 252 ] , and in enabling one to cover severe substrate topographic features by bias sputtering . In general , all of these effects and ...
... effect been put to beneficial use in the coating of the inside walls of through holes in substrates [ 252 ] , and in enabling one to cover severe substrate topographic features by bias sputtering . In general , all of these effects and ...
Page 245
... effect . Agitation usually increases the proportion of the more noble metal ; thus it tends to offset the effect of current density . By bringing fresh solu- tion to the cathode face and decreasing the thickness of the cathode film ...
... effect . Agitation usually increases the proportion of the more noble metal ; thus it tends to offset the effect of current density . By bringing fresh solu- tion to the cathode face and decreasing the thickness of the cathode film ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min