Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 80
John L. Vossen, Werner Kern. tion by electron - electron collisions and the randomizing effects of plasma oscillations ) [ 44a ] . Electron energies and temperatures are often speci- fied in electron volts , where 1 eV = 11600 K [ 45 ] ...
John L. Vossen, Werner Kern. tion by electron - electron collisions and the randomizing effects of plasma oscillations ) [ 44a ] . Electron energies and temperatures are often speci- fied in electron volts , where 1 eV = 11600 K [ 45 ] ...
Page 86
... electron drift waves [ 69-72 ] . A similar effect ( dioco- tron instability ) can occur if the radial variation in electron density has a strong maximum within the plasma region [ 64 , 73 , 74 ] . Electron electro- static waves ...
... electron drift waves [ 69-72 ] . A similar effect ( dioco- tron instability ) can occur if the radial variation in electron density has a strong maximum within the plasma region [ 64 , 73 , 74 ] . Electron electro- static waves ...
Page 177
... electron impact ionization has a maximum at low electron energy , about 70 eV for argon [ 3 ] , therefore high electron energies are not needed for efficient ion- ization . More important are the electron supply rate and gas pressure ...
... electron impact ionization has a maximum at low electron energy , about 70 eV for argon [ 3 ] , therefore high electron energies are not needed for efficient ion- ization . More important are the electron supply rate and gas pressure ...
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Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York