Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 80
John L. Vossen, Werner Kern. tion by electron - electron collisions and the randomizing effects of plasma oscillations ) [ 44a ] . Electron energies and temperatures are often speci- fied in electron volts , where 1 eV = 11600 K [ 45 ] ...
John L. Vossen, Werner Kern. tion by electron - electron collisions and the randomizing effects of plasma oscillations ) [ 44a ] . Electron energies and temperatures are often speci- fied in electron volts , where 1 eV = 11600 K [ 45 ] ...
Page 86
... electron drift waves [ 69-72 ] . A similar effect ( dioco- tron instability ) can occur if the radial variation in electron density has a strong maximum within the plasma region [ 64 , 73 , 74 ] . Electron electro- static waves ...
... electron drift waves [ 69-72 ] . A similar effect ( dioco- tron instability ) can occur if the radial variation in electron density has a strong maximum within the plasma region [ 64 , 73 , 74 ] . Electron electro- static waves ...
Page 177
... electron impact ionization has a maximum at low electron energy , about 70 eV for argon [ 3 ] , therefore high electron energies are not needed for efficient ion- ization . More important are the electron supply rate and gas pressure ...
... electron impact ionization has a maximum at low electron energy , about 70 eV for argon [ 3 ] , therefore high electron energies are not needed for efficient ion- ization . More important are the electron supply rate and gas pressure ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min