Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 191
... energy E approximately proportional to E1 / 2 from a threshold of a few tens electron volts to a maximum around 10-20 keV , then decreases at higher energy due to implantation [ 55 ] . s is of the order of unity in the energy range ...
... energy E approximately proportional to E1 / 2 from a threshold of a few tens electron volts to a maximum around 10-20 keV , then decreases at higher energy due to implantation [ 55 ] . s is of the order of unity in the energy range ...
Page 199
... Energy Limitations In primary ion beam deposition the useful energy range of the beam is limited at low energies by low deposition rates and space charge spread- ing and at high energies by self - sputtering of the growing film or ...
... Energy Limitations In primary ion beam deposition the useful energy range of the beam is limited at low energies by low deposition rates and space charge spread- ing and at high energies by self - sputtering of the growing film or ...
Page 499
... energy . It subsequently loses kinetic energy in each collision with a gas molecule ( or atom ) , but initially , the losses amount to only a small frac- tion of its total energy since these collisions will necessarily be elastic ; the ...
... energy . It subsequently loses kinetic energy in each collision with a gas molecule ( or atom ) , but initially , the losses amount to only a small frac- tion of its total energy since these collisions will necessarily be elastic ; the ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min