Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 422
John L. Vossen, Werner Kern. 230 ] . The etch rate is strongly affected by the presence of any oxygen linkages in the films ; in HF and BHF it increases with increasing oxygen content , while in H3PO , it decreases . The dissolution ...
John L. Vossen, Werner Kern. 230 ] . The etch rate is strongly affected by the presence of any oxygen linkages in the films ; in HF and BHF it increases with increasing oxygen content , while in H3PO , it decreases . The dissolution ...
Page 520
... etch at the same rate in pure Ar yet the addition of 10-4 Torr of O2 reduces the Si etch rate to half that of oxide . Argon / oxygen gas mixtures have generally been used to etch deep pat- terns into an inactive material using an active ...
... etch at the same rate in pure Ar yet the addition of 10-4 Torr of O2 reduces the Si etch rate to half that of oxide . Argon / oxygen gas mixtures have generally been used to etch deep pat- terns into an inactive material using an active ...
Page 529
... etch gas and material to be etched , the etch rate depends on the amount of etchable surface exposed to the plasma [ 90 ] . This phenomenon , referred to as the loading effect , is a direct result of depletion of the plasma activated ...
... etch gas and material to be etched , the etch rate depends on the amount of etchable surface exposed to the plasma [ 90 ] . This phenomenon , referred to as the loading effect , is a direct result of depletion of the plasma activated ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min