Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 422
John L. Vossen, Werner Kern. 230 ] . The etch rate is strongly affected by the presence of any oxygen linkages in the films ; in HF and BHF it increases with increasing oxygen content , while in H3PO , it decreases . The dissolution ...
John L. Vossen, Werner Kern. 230 ] . The etch rate is strongly affected by the presence of any oxygen linkages in the films ; in HF and BHF it increases with increasing oxygen content , while in H3PO , it decreases . The dissolution ...
Page 520
... etch at the same rate in pure Ar yet the addition of 10-4 Torr of O2 reduces the Si etch rate to half that of oxide . Argon / oxygen gas mixtures have generally been used to etch deep pat- terns into an inactive material using an active ...
... etch at the same rate in pure Ar yet the addition of 10-4 Torr of O2 reduces the Si etch rate to half that of oxide . Argon / oxygen gas mixtures have generally been used to etch deep pat- terns into an inactive material using an active ...
Page 529
... etch gas and material to be etched , the etch rate depends on the amount of etchable surface exposed to the plasma [ 90 ] . This phenomenon , referred to as the loading effect , is a direct result of depletion of the plasma activated ...
... etch gas and material to be etched , the etch rate depends on the amount of etchable surface exposed to the plasma [ 90 ] . This phenomenon , referred to as the loading effect , is a direct result of depletion of the plasma activated ...
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Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York