Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 404
... etchant medium . Gas phase etching may involve vaporization of the material being etched in a vacuum or inert atmosphere or may involve reaction of gas- eous etchants with the surface to produce volatile products . Elevated temperatures ...
... etchant medium . Gas phase etching may involve vaporization of the material being etched in a vacuum or inert atmosphere or may involve reaction of gas- eous etchants with the surface to produce volatile products . Elevated temperatures ...
Page 460
... Etchant 2HNO3 , 2HCI , 1H2O Conditions Application , etch rate , remarks Refs . Polishing [ 477 ] 14 20 ml H2O , 10 ... Etchant no . 6 95 ° , 10 min Polishing to high polish ; etch pits on ( 111 ) face [ 472 ] ZnSe 21 Etchant no . 15 ...
... Etchant 2HNO3 , 2HCI , 1H2O Conditions Application , etch rate , remarks Refs . Polishing [ 477 ] 14 20 ml H2O , 10 ... Etchant no . 6 95 ° , 10 min Polishing to high polish ; etch pits on ( 111 ) face [ 472 ] ZnSe 21 Etchant no . 15 ...
Page 462
... Etchant no . 17 40 ° , 3 min Polishing [ 480 ] 20 Etchant no . 19 Electrolytic ; 10 V ; rinse in C2H2OH Polishing Pb , - , Sn , Te 22 Etchant no . 19 Electrolytic ; 10 V , rinse in C2H2OH Polishing [ 492 ] [ 494 ] [ 492 ] [ 494 ] 22 Sb ...
... Etchant no . 17 40 ° , 3 min Polishing [ 480 ] 20 Etchant no . 19 Electrolytic ; 10 V ; rinse in C2H2OH Polishing Pb , - , Sn , Te 22 Etchant no . 19 Electrolytic ; 10 V , rinse in C2H2OH Polishing [ 492 ] [ 494 ] [ 492 ] [ 494 ] 22 Sb ...
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Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York