Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 44
... example , various refractory alloys have been cleaned successfully in Ar - HCl mixtures , but cleaning in Ar - CCL resulted in C deposits on the substrates . With the Ar - HCl mixtures there may have been some Cl residue remaining after ...
... example , various refractory alloys have been cleaned successfully in Ar - HCl mixtures , but cleaning in Ar - CCL resulted in C deposits on the substrates . With the Ar - HCl mixtures there may have been some Cl residue remaining after ...
Page 262
... example of a reduction reaction is the deposition of silicon from silicon tetrachloride : SiCl4 + 2H200 - Si ( s ) + 4HCl ) . The HCl formed might , in turn , react with the solid Si to form other gas- eous species detected in the Si ...
... example of a reduction reaction is the deposition of silicon from silicon tetrachloride : SiCl4 + 2H200 - Si ( s ) + 4HCl ) . The HCl formed might , in turn , react with the solid Si to form other gas- eous species detected in the Si ...
Page 301
... example , that BN deposited at 800 ° C on Si is electrically similar to Si3N4 but is not as good a Na + barrier and ... Example of a CVD Process In this section we shall discuss effects of deposition and substrate vari- ables on the ...
... example , that BN deposited at 800 ° C on Si is electrically similar to Si3N4 but is not as good a Na + barrier and ... Example of a CVD Process In this section we shall discuss effects of deposition and substrate vari- ables on the ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min