Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
From inside the book
Results 1-3 of 68
Page 274
... factor of 1000. This is only partially offset by the fact that the ( laminar ) boundary layer ( distance across ... factor of 10-100 higher , the density a factor of 1000 lower , the viscosity and distance basically the same . Therefore ...
... factor of 1000. This is only partially offset by the fact that the ( laminar ) boundary layer ( distance across ... factor of 10-100 higher , the density a factor of 1000 lower , the viscosity and distance basically the same . Therefore ...
Page 368
... factor that must be considered in dealing with operational factors of glow discharge polymer- ization is that glow ... factor cannot be taken as an independent variable of the process . A. Modes of Electric Discharge Electric power ...
... factor that must be considered in dealing with operational factors of glow discharge polymer- ization is that glow ... factor cannot be taken as an independent variable of the process . A. Modes of Electric Discharge Electric power ...
Page 512
... Factors Controlling lon Etching Rates The rate of ion etching is , to a first approximation , related to the prod- uct of two factors - the impinging ion flux density and the sputtering yield . The former factor is related to the ion ...
... Factors Controlling lon Etching Rates The rate of ion etching is , to a first approximation , related to the prod- uct of two factors - the impinging ion flux density and the sputtering yield . The former factor is related to the ion ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
10 other sections not shown
Other editions - View all
Common terms and phrases
Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min