Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 370
... Flow Rate The flow rate in most cases of glow discharge polymerization simply refers to the feeding - in rate of the starting materials into the total vacuum system , and it does not necessarily mean the rate at which the starting ...
... Flow Rate The flow rate in most cases of glow discharge polymerization simply refers to the feeding - in rate of the starting materials into the total vacuum system , and it does not necessarily mean the rate at which the starting ...
Page 383
John L. Vossen, Werner Kern. 2. Flow Rate The polymer deposition rate increases linearly with the flow rate of a starting material under ideal conditions where the conversion ratio of starting material to polymer is high or remains at a ...
John L. Vossen, Werner Kern. 2. Flow Rate The polymer deposition rate increases linearly with the flow rate of a starting material under ideal conditions where the conversion ratio of starting material to polymer is high or remains at a ...
Page 533
... rate must eventually decrease with increasing pressure , at a fixed power density . Conversely , as the pressure is ... Flow Rate Plasma etching is normally done under dynamic flow to replenish con- tinually the reactant species and ...
... rate must eventually decrease with increasing pressure , at a fixed power density . Conversely , as the pressure is ... Flow Rate Plasma etching is normally done under dynamic flow to replenish con- tinually the reactant species and ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min