Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
From inside the book
Results 1-3 of 35
Page 105
... flux has been found to be proportional to the sputtered flux and to vary from 15 to 25 eV / atom for metals such as Ti , Cr , and Cu to ≥ 50 eV / atom for heavy metals such as Mo , Ta , and W where ion reflection and sputtered atom ...
... flux has been found to be proportional to the sputtered flux and to vary from 15 to 25 eV / atom for metals such as Ti , Cr , and Cu to ≥ 50 eV / atom for heavy metals such as Mo , Ta , and W where ion reflection and sputtered atom ...
Page 168
... flux due to condensation of Al atoms having an average kinetic energy of 6 eV will be 0.142 W / cm2 at a deposition rate of 1 μm / min . If we assume that the aver- age kinetic energy of PM sputtered aluminum atoms is 12 eV ( or that 12 ...
... flux due to condensation of Al atoms having an average kinetic energy of 6 eV will be 0.142 W / cm2 at a deposition rate of 1 μm / min . If we assume that the aver- age kinetic energy of PM sputtered aluminum atoms is 12 eV ( or that 12 ...
Page 192
... flux usually matches the target composition [ 46 , 62a ] . A dependence of sputtered film composition on angle of ejection has however been reported [ 62b ] with Ni - Fe and Ni - Cu alloy targets . It is necessary to presputter the ...
... flux usually matches the target composition [ 46 , 62a ] . A dependence of sputtered film composition on angle of ejection has however been reported [ 62b ] with Ni - Fe and Ni - Cu alloy targets . It is necessary to presputter the ...
Other editions - View all
Common terms and phrases
Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York