Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 102
... function F for a cathode whose length is ten times its diameter . It displays the end effect correction as a function of radial and axial position near the cathode . An auxiliary con- tour ( the dashed line labeled 80 % ) shows the ...
... function F for a cathode whose length is ten times its diameter . It displays the end effect correction as a function of radial and axial position near the cathode . An auxiliary con- tour ( the dashed line labeled 80 % ) shows the ...
Page 125
... function of probe voltage . By adjusting the relative removal and deposition rates , film deposition or etching was obtained at the substrate . In the 12.5 cm magnetron , the use of positive bias of + 100 V or more on the anode has led ...
... function of probe voltage . By adjusting the relative removal and deposition rates , film deposition or etching was obtained at the substrate . In the 12.5 cm magnetron , the use of positive bias of + 100 V or more on the anode has led ...
Page 429
... function of temperature for 0.1 % SF is shown in Fig . 12 , and as a function of SF , partial pressure in Fig . 13 [ 362 ] . The advantages of SF over other reagents lie in the noncorrosiveness , nontoxicity , and low temperature needed ...
... function of temperature for 0.1 % SF is shown in Fig . 12 , and as a function of SF , partial pressure in Fig . 13 [ 362 ] . The advantages of SF over other reagents lie in the noncorrosiveness , nontoxicity , and low temperature needed ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min