Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 60
John L. Vossen, Werner Kern. 5. System Geometry Geometric effects such as target - to - substrate distance have been shown to affect the amount of gas incorporated in films . The greater the distance of the target from the substrate the ...
John L. Vossen, Werner Kern. 5. System Geometry Geometric effects such as target - to - substrate distance have been shown to affect the amount of gas incorporated in films . The greater the distance of the target from the substrate the ...
Page 135
John L. Vossen, Werner Kern. 1. Cathode and Magnet Geometry Magnet arrangements can be varied substantially , the only constraints being those of geometry and the requirement that there be at least one closed path where the magnetic ...
John L. Vossen, Werner Kern. 1. Cathode and Magnet Geometry Magnet arrangements can be varied substantially , the only constraints being those of geometry and the requirement that there be at least one closed path where the magnetic ...
Page 561
... geometry , 77 Mass spectrometer , 260 Mass spectrometry , in chemical vapor dep- osition , 260 , 261 , 272–274 , 292 ... geometry , 135 shields , 136-138 electromagnet for , 136 insulators for , 136-138 magnet geometry , 135 permanent ...
... geometry , 77 Mass spectrometer , 260 Mass spectrometry , in chemical vapor dep- osition , 260 , 261 , 272–274 , 292 ... geometry , 135 shields , 136-138 electromagnet for , 136 insulators for , 136-138 magnet geometry , 135 permanent ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min