Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 148
... given cathode erosion rate . In most cases , modification of magnet geometry is preferable to aperture shielding . An exception would be for rate or angle - of - inci- dence control ; for example , single or stacked aperture shields can ...
... given cathode erosion rate . In most cases , modification of magnet geometry is preferable to aperture shielding . An exception would be for rate or angle - of - inci- dence control ; for example , single or stacked aperture shields can ...
Page 150
John L. Vossen, Werner Kern. For a given cathode configuration , a family of current - voltage curves versus pressure can be obtained that enable a suitable operating point to be chosen for a given power input . Similar or argon ...
John L. Vossen, Werner Kern. For a given cathode configuration , a family of current - voltage curves versus pressure can be obtained that enable a suitable operating point to be chosen for a given power input . Similar or argon ...
Page 230
... given solution it is likely that more current is carried by the cations than by the anions , or vice versa . The proportion of the total current carried by a given ion is its transport or transference number . The ions having the ...
... given solution it is likely that more current is carried by the cations than by the anions , or vice versa . The proportion of the total current carried by a given ion is its transport or transference number . The ions having the ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min