Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 526
... halogens . Halocarbons have been used extensively in plasma etching because many of them are easy to handle , noncorrosive , and relatively nontoxic sources of halogens . When subjected to a discharge , these gases can be fragmented to ...
... halogens . Halocarbons have been used extensively in plasma etching because many of them are easy to handle , noncorrosive , and relatively nontoxic sources of halogens . When subjected to a discharge , these gases can be fragmented to ...
Page 527
... halogen containing gases often has beneficial effects on etching . As indicated in Section II.C.4 , several percent O2 markedly increases the concentration of atomic F in CF4 - O2 discharges , and this in turn increases the etch rate ...
... halogen containing gases often has beneficial effects on etching . As indicated in Section II.C.4 , several percent O2 markedly increases the concentration of atomic F in CF4 - O2 discharges , and this in turn increases the etch rate ...
Page 529
... halogen atoms and may also encour- age polymer deposition . Again , depending on the application and the abil- ity to control these effects , the presence of hydrogen may be desirable . It is fair to say that almost all the gas mixtures ...
... halogen atoms and may also encour- age polymer deposition . Again , depending on the application and the abil- ity to control these effects , the presence of hydrogen may be desirable . It is fair to say that almost all the gas mixtures ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min