Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 56
John L. Vossen, Werner Kern. higher because the electron temperatures are higher for otherwise equiva- lent conditions . The variation of the plasma potential ( V , ) with de glow discharge con- ditions is similar to the variation of the ...
John L. Vossen, Werner Kern. higher because the electron temperatures are higher for otherwise equiva- lent conditions . The variation of the plasma potential ( V , ) with de glow discharge con- ditions is similar to the variation of the ...
Page 191
... higher energy due to implantation [ 55 ] . s is of the order of unity in the energy range considered here [ 56 ] . ( 2 ) s generally increases with mass of ion [ 54b , 55 , 57 ] . ( 3 ) s increases with angle of ion incidence away from ...
... higher energy due to implantation [ 55 ] . s is of the order of unity in the energy range considered here [ 56 ] . ( 2 ) s generally increases with mass of ion [ 54b , 55 , 57 ] . ( 3 ) s increases with angle of ion incidence away from ...
Page 245
... higher the ratio M , / M2 in the bath , the higher that in the deposit , but not necessarily in the same proportion . The current efficiency in alloy plating may be higher or lower than that for each single metal . In some cases , such ...
... higher the ratio M , / M2 in the bath , the higher that in the deposit , but not necessarily in the same proportion . The current efficiency in alloy plating may be higher or lower than that for each single metal . In some cases , such ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min