Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 59
... increase in concen- tration for both triode and diode sputtered W films [ 478 ] , and the amount of Ar that is incorporated in the film increases with the atomic number of the target material [ 489 ] . 3. Substrate Temperature As the ...
... increase in concen- tration for both triode and diode sputtered W films [ 478 ] , and the amount of Ar that is incorporated in the film increases with the atomic number of the target material [ 489 ] . 3. Substrate Temperature As the ...
Page 245
... increase in current density normally will increase the proportion of the less noble metal in the alloy deposit , although some addition agents may reverse this effect . Agitation usually increases the proportion of the more noble metal ...
... increase in current density normally will increase the proportion of the less noble metal in the alloy deposit , although some addition agents may reverse this effect . Agitation usually increases the proportion of the more noble metal ...
Page 303
... increases rapidly as the temperature is increased to 310 ° C , and very gradually as it is further increased to 450 ° C . To attain an increase in the maximum depo- sition rate with temperature , the O2 / SiH , ratio must be ...
... increases rapidly as the temperature is increased to 310 ° C , and very gradually as it is further increased to 450 ° C . To attain an increase in the maximum depo- sition rate with temperature , the O2 / SiH , ratio must be ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min