Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 97
... indicate that the degree of ionization in the electron trap is a few percent or less . These measure- ments are generally consistent with estimates based on the cathode cur- rent density using Eq . ( 13 ) . Gas flux calculations indicate ...
... indicate that the degree of ionization in the electron trap is a few percent or less . These measure- ments are generally consistent with estimates based on the cathode cur- rent density using Eq . ( 13 ) . Gas flux calculations indicate ...
Page 144
... indicate approximate boundaries for ± 5 % uniformity . Based on ring source analysis of Glang [ 53 ] . where n is the ring number . This results in an array of 2 - cm - wide rings with 2 cm spacing between rings . As Table III indicates ...
... indicate approximate boundaries for ± 5 % uniformity . Based on ring source analysis of Glang [ 53 ] . where n is the ring number . This results in an array of 2 - cm - wide rings with 2 cm spacing between rings . As Table III indicates ...
Page 433
... indicated in the last column . The compositions of concentrated aqueous reagents noted in the tables are given in the accompanying tabulation . Reagent Wt % Reagent Wt % HCI 37 H2O2 HF 49 N2H , ( hydrazine ) H2SO4 98 NH , OH 30 64 29 ...
... indicated in the last column . The compositions of concentrated aqueous reagents noted in the tables are given in the accompanying tabulation . Reagent Wt % Reagent Wt % HCI 37 H2O2 HF 49 N2H , ( hydrazine ) H2SO4 98 NH , OH 30 64 29 ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min