Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 226
... inhibited oils , dry film lubricants , and other materials may be used similarly . Zinc phosphate coatings used with a lubricant ( soap ) facilitate severe deforma- tion of steel during drawing , stamping , and extruding . E ...
... inhibited oils , dry film lubricants , and other materials may be used similarly . Zinc phosphate coatings used with a lubricant ( soap ) facilitate severe deforma- tion of steel during drawing , stamping , and extruding . E ...
Page 303
... inhibit the reaction , decreasing the rate of film growth . Thus , a plateau region forms that is insensitive to the ... inhibition the SiH4 / O reaction kinetics is first - order overall [ 268 ] . The corresponding parameter effects for ...
... inhibit the reaction , decreasing the rate of film growth . Thus , a plateau region forms that is insensitive to the ... inhibition the SiH4 / O reaction kinetics is first - order overall [ 268 ] . The corresponding parameter effects for ...
Page 415
... inhibit attack of the metal . Pattern etching of SiO2 films in vapors from aqueous HF , although rarely used , is an interesting alternative to liquid etching and can yield comparable results at reasonable rates [ 114 ] . It proceeds by ...
... inhibit attack of the metal . Pattern etching of SiO2 films in vapors from aqueous HF , although rarely used , is an interesting alternative to liquid etching and can yield comparable results at reasonable rates [ 114 ] . It proceeds by ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min