Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 301
... interest is aluminum nitride , AIN , which has potential as a good dielectric for active and passive components in semiconductor devices because of its large energy gap and high thermal and chemical stability [ 248 ] . Aluminum nitride ...
... interest is aluminum nitride , AIN , which has potential as a good dielectric for active and passive components in semiconductor devices because of its large energy gap and high thermal and chemical stability [ 248 ] . Aluminum nitride ...
Page 516
... interest to note that for rf sputter etching in chemically reactive gases such as Ar / O2 or Ar / halocarbon mixtures , this nonpreferential etch rate has not been detected and wide differences have been observed between masking and ...
... interest to note that for rf sputter etching in chemically reactive gases such as Ar / O2 or Ar / halocarbon mixtures , this nonpreferential etch rate has not been detected and wide differences have been observed between masking and ...
Page 544
... interest to note that so - called negative undercutting has also been reported [ 111 ] . According to this report , under certain conditions the etched feature can protrude beyond the mask edge . No explanation or confirmation of this ...
... interest to note that so - called negative undercutting has also been reported [ 111 ] . According to this report , under certain conditions the etched feature can protrude beyond the mask edge . No explanation or confirmation of this ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min