Thin Film Processes, Volume 1Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 301
Another refractory nitride of interest is aluminum nitride , AIN , which has potential
as a good dielectric for active and passive components in semiconductor devices
because of its large energy gap and high thermal and chemical stability ( 248 ) ...
Another refractory nitride of interest is aluminum nitride , AIN , which has potential
as a good dielectric for active and passive components in semiconductor devices
because of its large energy gap and high thermal and chemical stability ( 248 ) ...
Page 516
It is of interest to note that for rf sputter etching in chemically reactive gases such
as Ar / O , or Ar / halocarbon mixtures , this nonpreferential etch rate has not been
detected and wide differences have been observed between masking and ...
It is of interest to note that for rf sputter etching in chemically reactive gases such
as Ar / O , or Ar / halocarbon mixtures , this nonpreferential etch rate has not been
detected and wide differences have been observed between masking and ...
Page 544
In the latter case , gross undercutting and complete loss of dimensional control
may result . It is of interest to note that so - called negative undercutting has also
been reported [ 111 ] . According to this report , under certain conditions the
etched ...
In the latter case , gross undercutting and complete loss of dimensional control
may result . It is of interest to note that so - called negative undercutting has also
been reported [ 111 ] . According to this report , under certain conditions the
etched ...
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Contents
Glow Discharge Sputter Deposition | 12 |
Glow Discharges | 24 |
Equipment Configuration | 31 |
Copyright | |
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addition alloys anode Appl applications atoms cathode charge chemical coatings composition compounds concentration constant containing density dependent deposition rate effect electric Electrochem electron energy Epitaxial etch rate etchants example factor flow formation gases given glass glow discharge heating higher important increase ion beam ionization layer less limited lower magnetic field magnetron material metal method negative nitride occurs operation oxide pattern Phys plasma plating polishing polymer polymerization positive potential prepared pressure produce properties range ratio reaction reactive reactor reducing Reference region relatively resistance semiconductor shown in Fig silicon solution species sputtering starting structure substrate surface Table target techniques Technol temperature thermal thickness Thin Thin Film tion typically um/min uniform usually vacuum vapor various voltage yield York