Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 19
... ions are produced during inert gas ion bombardment of pure metal surfaces . Negative ions , like electrons , are accelerated away from the target toward the substrates , thus representing another source of substrate bombardment ...
... ions are produced during inert gas ion bombardment of pure metal surfaces . Negative ions , like electrons , are accelerated away from the target toward the substrates , thus representing another source of substrate bombardment ...
Page 179
... ion emitting surface . An aper- ture in the anode or cathode ( Fig . 2 ) is used to extract ions into a beam . The energy of ions in the beam is determined by the potential at which the ions originate . Since the plasma is highly ...
... ion emitting surface . An aper- ture in the anode or cathode ( Fig . 2 ) is used to extract ions into a beam . The energy of ions in the beam is determined by the potential at which the ions originate . Since the plasma is highly ...
Page 239
... ions , and if plating is to continue , these ions must be replenished . This can be accomplished in three ways . Ionic migration is the least important . Assuming that the metal is con- tained in a cation , that the bath is acidic and ...
... ions , and if plating is to continue , these ions must be replenished . This can be accomplished in three ways . Ionic migration is the least important . Assuming that the metal is con- tained in a cation , that the bath is acidic and ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min