Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 160
... kinetic energy [ 49 , 81 ] ( see Section IV.B ) . The kinetic energy of PM sputtered atoms is not known , but the average energy may be higher than that generated by conventional dc sputtering due to the high percentage of ionization of ...
... kinetic energy [ 49 , 81 ] ( see Section IV.B ) . The kinetic energy of PM sputtered atoms is not known , but the average energy may be higher than that generated by conventional dc sputtering due to the high percentage of ionization of ...
Page 236
... kinetics must be considered in addition to thermodynamic equilibria . Thus , the total cathode reaction tells us nothing about the intermediate steps ; each step may involve kinetic factors that add to the potential required to drive ...
... kinetics must be considered in addition to thermodynamic equilibria . Thus , the total cathode reaction tells us nothing about the intermediate steps ; each step may involve kinetic factors that add to the potential required to drive ...
Page 499
... kinetic energy . It subsequently loses kinetic energy in each collision with a gas molecule ( or atom ) , but initially , the losses amount to only a small frac- tion of its total energy since these collisions will necessarily be ...
... kinetic energy . It subsequently loses kinetic energy in each collision with a gas molecule ( or atom ) , but initially , the losses amount to only a small frac- tion of its total energy since these collisions will necessarily be ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min