Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
From inside the book
Results 1-3 of 63
Page 21
... layer will recede uni- formly with continued sputtering as long as the steady state conditions are maintained . Data on altered layers come from several areas : sputter depo- sition [ 83 , 84 ] , surface analysis [ 85 , 86 ] , and ion ...
... layer will recede uni- formly with continued sputtering as long as the steady state conditions are maintained . Data on altered layers come from several areas : sputter depo- sition [ 83 , 84 ] , surface analysis [ 85 , 86 ] , and ion ...
Page 22
... layer has been explored in some detail for a variety of targets [ 83-85 , 92-94 ] . Estimates for metal alloys have been a few tens of angstroms . For oxides the layer is much thicker ( ~ 1000 Å ) [ 94 ] . 4. Diffusion Diffusion ...
... layer has been explored in some detail for a variety of targets [ 83-85 , 92-94 ] . Estimates for metal alloys have been a few tens of angstroms . For oxides the layer is much thicker ( ~ 1000 Å ) [ 94 ] . 4. Diffusion Diffusion ...
Page 240
... layer is , however , much thicker than the electric double layer , which is only about 1 nm thick . The diffusion rate at the cathode is important in determining the limit- ing cathode current density that may be employed , and ...
... layer is , however , much thicker than the electric double layer , which is only about 1 nm thick . The diffusion rate at the cathode is important in determining the limit- ing cathode current density that may be employed , and ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
10 other sections not shown
Other editions - View all
Common terms and phrases
Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min