Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
From inside the book
Results 1-3 of 65
Page 89
... field in the PC adjacent to the anode ( in configurations with axial anodes ) and the for- mation of a negative space charge ( NSC ) anode sheath if the anode diame- ter is small . If the magnetic field is made very strong , the ...
... field in the PC adjacent to the anode ( in configurations with axial anodes ) and the for- mation of a negative space charge ( NSC ) anode sheath if the anode diame- ter is small . If the magnetic field is made very strong , the ...
Page 95
... magnetic field strength . Copper cathode , argon : ⚫ , 10 mTorr ; O , 0.5 mTorr . with pressure ( more collision targets to make ionization ) . At a fixed volt- age and pressure the current increases with the magnetic field strength ...
... magnetic field strength . Copper cathode , argon : ⚫ , 10 mTorr ; O , 0.5 mTorr . with pressure ( more collision targets to make ionization ) . At a fixed volt- age and pressure the current increases with the magnetic field strength ...
Page 132
... magnetic field lines parallel to the cathode surface is a closed path . Although there are many variations in geometry , all have in common a closed path or region in front of a substantially flat cathode sur- face where the magnetic ...
... magnetic field lines parallel to the cathode surface is a closed path . Although there are many variations in geometry , all have in common a closed path or region in front of a substantially flat cathode sur- face where the magnetic ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
10 other sections not shown
Other editions - View all
Common terms and phrases
Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min