Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 202
... mass contamination and < 10 at . % light mass by Rutherford backscattering analysis in Pb films deposited at 24-200 eV using a velocity mass filter . Similar purity was ob- tained for Mg [ 77 ] . Thus , high purity may be obtained with a ...
... mass contamination and < 10 at . % light mass by Rutherford backscattering analysis in Pb films deposited at 24-200 eV using a velocity mass filter . Similar purity was ob- tained for Mg [ 77 ] . Thus , high purity may be obtained with a ...
Page 260
... mass spectrometer attached to a CVD reactor which permits direct sampling of the vapor under CVD conditions for ... MASS SPECTROMETER Fig . 1. Schematic representation of the system mass spectrometer - CVD reactor ( from Ban and ...
... mass spectrometer attached to a CVD reactor which permits direct sampling of the vapor under CVD conditions for ... MASS SPECTROMETER Fig . 1. Schematic representation of the system mass spectrometer - CVD reactor ( from Ban and ...
Page 288
... mass controllers . The rotameters are frequently coupled to precision valves which are used to preset flows ... mass units ( e.g. , liter / min or g / min ) . A schematic of a typical gas flow control system used in conjunction with low ...
... mass controllers . The rotameters are frequently coupled to precision valves which are used to preset flows ... mass units ( e.g. , liter / min or g / min ) . A schematic of a typical gas flow control system used in conjunction with low ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min