Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 293
... Metal halide hydrolysis and oxidation are generally effected in the temperature range of about 400-1000 ° C . Oxide ... metal halides has been used to prepare TiO , films [ 136 , 146 , 147 ] . Low - temperature hydrol- ysis , typically ...
... Metal halide hydrolysis and oxidation are generally effected in the temperature range of about 400-1000 ° C . Oxide ... metal halides has been used to prepare TiO , films [ 136 , 146 , 147 ] . Low - temperature hydrol- ysis , typically ...
Page 317
John L. Vossen, Werner Kern. Table VIII CVD of Metals and Metal Alloys " CVD metal Metal halide reductions Organometallic reactions Inorganic pyrolysis and other reactions Ag [ 349 ] ΑΙ [ 119 , 350 , 351 ] Al , Ta [ 352 ] Au [ 119 ] Be ...
John L. Vossen, Werner Kern. Table VIII CVD of Metals and Metal Alloys " CVD metal Metal halide reductions Organometallic reactions Inorganic pyrolysis and other reactions Ag [ 349 ] ΑΙ [ 119 , 350 , 351 ] Al , Ta [ 352 ] Au [ 119 ] Be ...
Page 318
... metal borides is H2 - reduction of the halide compounds at high temperature . The deposition of TiB2 from TiCl4 - BC13 - H2 , typically at 1225 ° C and 0.26 atm pressure , is a good example of an extensively studied system [ 407 ] ...
... metal borides is H2 - reduction of the halide compounds at high temperature . The deposition of TiB2 from TiCl4 - BC13 - H2 , typically at 1225 ° C and 0.26 atm pressure , is a good example of an extensively studied system [ 407 ] ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min