Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 19
... negative target field , so these are of little interest . Negative ions have been studied by SIMS to a lesser extent [ 44-53 ] . Negative ions result mainly from the sputtering of the anionic species of compounds [ 48-51 ] and high ...
... negative target field , so these are of little interest . Negative ions have been studied by SIMS to a lesser extent [ 44-53 ] . Negative ions result mainly from the sputtering of the anionic species of compounds [ 48-51 ] and high ...
Page 26
... negative glow region . The Faraday dark space and positive column are nearly field - free re- gions whose sole function is to connect electrically the negative glow to the anode . They are not at all essential to the operation of a glow ...
... negative glow region . The Faraday dark space and positive column are nearly field - free re- gions whose sole function is to connect electrically the negative glow to the anode . They are not at all essential to the operation of a glow ...
Page 87
... negative glow ( NG ) is the energy exchange region for the primary electrons , and its extent corresponds to the extent of their travel [ 1 , 2 ] . The electron distribution in the NG consists of primary electrons , ulti- mate electrons ...
... negative glow ( NG ) is the energy exchange region for the primary electrons , and its extent corresponds to the extent of their travel [ 1 , 2 ] . The electron distribution in the NG consists of primary electrons , ulti- mate electrons ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min