Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 97
... observed at low pressures just prior to extinguishing of the discharge . Oscillations at frequencies in the range 50-500 kHz , with a maximum frequency that varies inversely with the square root of the working gas atomic mass , have ...
... observed at low pressures just prior to extinguishing of the discharge . Oscillations at frequencies in the range 50-500 kHz , with a maximum frequency that varies inversely with the square root of the working gas atomic mass , have ...
Page 107
... observed in cylindrical magnetrons because they can operate below the transition pressure for even the low - mass metals . A few reports of compressive stresses in heavy elements have been made for other devices capable of operating ...
... observed in cylindrical magnetrons because they can operate below the transition pressure for even the low - mass metals . A few reports of compressive stresses in heavy elements have been made for other devices capable of operating ...
Page 194
... observed . Chopra and Randlett [ 54 ] obtained fcc modifications of normally bcc Ta , Mo , and W , and normally hcp Re , Hf , and Zr in an intermediate tempera- ture range of substrates using argon ion beam sputtering . The refractory ...
... observed . Chopra and Randlett [ 54 ] obtained fcc modifications of normally bcc Ta , Mo , and W , and normally hcp Re , Hf , and Zr in an intermediate tempera- ture range of substrates using argon ion beam sputtering . The refractory ...
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Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York