Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 78
... obtained from plasma rings sustained over planar surfaces , as shown in Fig . 3e . These planar magnetrons are dis- cussed in Chapter II - 3 . When the magnetron mode is obtained from plasma rings sustained on short cylinders or within ...
... obtained from plasma rings sustained over planar surfaces , as shown in Fig . 3e . These planar magnetrons are dis- cussed in Chapter II - 3 . When the magnetron mode is obtained from plasma rings sustained on short cylinders or within ...
Page 182
... obtained at about 20 keV beam energy through an aper- ture of 0.03 - cm diameter with an energy spread of 10-50 eV [ 15 ] . The con- verging region of magnetic field lines acts as a magnetic mirror to reflect electrons back to the ...
... obtained at about 20 keV beam energy through an aper- ture of 0.03 - cm diameter with an energy spread of 10-50 eV [ 15 ] . The con- verging region of magnetic field lines acts as a magnetic mirror to reflect electrons back to the ...
Page 194
... obtained at room temperature by Chopra and Randlett [ 54 ] . Crystal structure and orientation are usually the same as obtained by other depo- sition techniques , although some unusual structures have been observed . Chopra and Randlett ...
... obtained at room temperature by Chopra and Randlett [ 54 ] . Crystal structure and orientation are usually the same as obtained by other depo- sition techniques , although some unusual structures have been observed . Chopra and Randlett ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min