Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 403
... occur by any of several different processes [ 1 , 2 , 8 ] . The simplest mode of etching involves dissolution of the material in a liquid solvent without any change in the chemical nature of the dis- solved species . Relatively few ...
... occur by any of several different processes [ 1 , 2 , 8 ] . The simplest mode of etching involves dissolution of the material in a liquid solvent without any change in the chemical nature of the dis- solved species . Relatively few ...
Page 506
... occurs at a lower O2 concentration than that which produces a maximum F atom concentration as can be seen in Fig . 1. Oxygen adsorption does not occur to an appreciable extent on the SiO , surface so that the maximum etch rate for SiO ...
... occurs at a lower O2 concentration than that which produces a maximum F atom concentration as can be seen in Fig . 1. Oxygen adsorption does not occur to an appreciable extent on the SiO , surface so that the maximum etch rate for SiO ...
Page 550
... occur under these circumstances [ 125-127 ] , giving rise to reliability problems if the devices are not annealed at around 900 ° C . The interface states are annealable at a lower temperature of 400 ° C . These appear to be caused by ...
... occur under these circumstances [ 125-127 ] , giving rise to reliability problems if the devices are not annealed at around 900 ° C . The interface states are annealable at a lower temperature of 400 ° C . These appear to be caused by ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min