Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 368
... occurs be- fore , during , and after the glow discharge . In the case of a nonpolymer- forming plasma , no pressure ... occurs onto surfaces exposed to ( directly contacting ) the glow . Some dep- osition of polymer occurs on surfaces in ...
... occurs be- fore , during , and after the glow discharge . In the case of a nonpolymer- forming plasma , no pressure ... occurs onto surfaces exposed to ( directly contacting ) the glow . Some dep- osition of polymer occurs on surfaces in ...
Page 403
... occur by any of several different processes [ 1 , 2 , 8 ] . The simplest mode of etching involves dissolution of the ... occurs when surface variations produce local anodes and cathodes . When films of two dissimilar metals are in ...
... occur by any of several different processes [ 1 , 2 , 8 ] . The simplest mode of etching involves dissolution of the ... occurs when surface variations produce local anodes and cathodes . When films of two dissimilar metals are in ...
Page 506
... occurs at a lower O , concentration than that which produces a maximum F atom concentration as can be seen in Fig . 1. Oxygen adsorption does not occur to an appreciable extent on the SiO2 surface so that the maximum etch rate for SiO ...
... occurs at a lower O , concentration than that which produces a maximum F atom concentration as can be seen in Fig . 1. Oxygen adsorption does not occur to an appreciable extent on the SiO2 surface so that the maximum etch rate for SiO ...
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Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York