Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 97
... operation of a rep- resentative cylindrical - post magnetron at fixed current . Copper cathode ( 3.2 - cm diam . x 30 cm long ) , argon : current density , 10 mA / cm2 . Figure 13 shows that operation at the low pressure limit is ...
... operation of a rep- resentative cylindrical - post magnetron at fixed current . Copper cathode ( 3.2 - cm diam . x 30 cm long ) , argon : current density , 10 mA / cm2 . Figure 13 shows that operation at the low pressure limit is ...
Page 120
... operation . × , 5 A constant current ; ○ , constant power . stant power mode of operation . As the pressure is decreased , the voltage required to sustain a given current increases and the sputtering efficiency increases [ 3 ] yielding ...
... operation . × , 5 A constant current ; ○ , constant power . stant power mode of operation . As the pressure is decreased , the voltage required to sustain a given current increases and the sputtering efficiency increases [ 3 ] yielding ...
Page 164
... operation of a 6 - mm - thick Al , O , cathode in argon in the pressure range 10-20 mTorr . ( Operation at 1 mTorr follows the same curve within the measurement error . ) For comparison , the curve for dc PM operation of a 9 - mm ...
... operation of a 6 - mm - thick Al , O , cathode in argon in the pressure range 10-20 mTorr . ( Operation at 1 mTorr follows the same curve within the measurement error . ) For comparison , the curve for dc PM operation of a 9 - mm ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Common terms and phrases
Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min