Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 222
... oxide is applied and rinsed , a final chromic acid rinse ( 1 ) min in 0.6 g / liter CrO3 , pH 2.5 , 75 ° C ) is applied , followed by drying in warm air . Black oxide coatings , though improved by this treatment , do not withstand ...
... oxide is applied and rinsed , a final chromic acid rinse ( 1 ) min in 0.6 g / liter CrO3 , pH 2.5 , 75 ° C ) is applied , followed by drying in warm air . Black oxide coatings , though improved by this treatment , do not withstand ...
Page 252
... oxide . These coatings are essentially non- porous ; their thickness is limited to about 1.3 nm / V applied . This thick- ness represents the distance through which ions can penetrate the oxide under the influence of the applied ...
... oxide . These coatings are essentially non- porous ; their thickness is limited to about 1.3 nm / V applied . This thick- ness represents the distance through which ions can penetrate the oxide under the influence of the applied ...
Page 549
... oxide - semiconductor devices ( MOS ) has been the subject of several stud- ies , particularly by McCaughan and Kushner [ 119 ] . The operational char- acteristics of this type of device are very dependent on the purity and electronic ...
... oxide - semiconductor devices ( MOS ) has been the subject of several stud- ies , particularly by McCaughan and Kushner [ 119 ] . The operational char- acteristics of this type of device are very dependent on the purity and electronic ...
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Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York