Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 301
... particularly attractive technique is pyrolysis of the complex AICI , 3NH3 at 800- 1200 ° C with H2 and anhydrous NH , as the carrier gases , yielding poly- crystalline films [ 248 , 249 ] . Mixed compositions of AIN and Si3N1 pre- pared ...
... particularly attractive technique is pyrolysis of the complex AICI , 3NH3 at 800- 1200 ° C with H2 and anhydrous NH , as the carrier gases , yielding poly- crystalline films [ 248 , 249 ] . Mixed compositions of AIN and Si3N1 pre- pared ...
Page 548
... particularly where multilevel or alloy metallization films are involved [ 85 ] . The problem can be mitigated somewhat by using multiple plasma processes ; introducing for example , a gas to clear the surface ( oxygen to remove resist ...
... particularly where multilevel or alloy metallization films are involved [ 85 ] . The problem can be mitigated somewhat by using multiple plasma processes ; introducing for example , a gas to clear the surface ( oxygen to remove resist ...
Page 549
... particularly by McCaughan and Kushner [ 119 ] . The operational char- acteristics of this type of device are very dependent on the purity and electronic structure of the gate oxide which can be degraded by inappro- priate processing ...
... particularly by McCaughan and Kushner [ 119 ] . The operational char- acteristics of this type of device are very dependent on the purity and electronic structure of the gate oxide which can be degraded by inappro- priate processing ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min