Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 439
... pattern etching with SiO2 mask [ 258 ] For surface etching 0.30 Å / min 0.47 Å / min 0.78 Å / min For epi Si etching ... pattern edges 4 μm / min ; nonlinear pattern edges 4 μm / min ; nonlinear pattern edges 0.8 μm / min ; smooth ...
... pattern etching with SiO2 mask [ 258 ] For surface etching 0.30 Å / min 0.47 Å / min 0.78 Å / min For epi Si etching ... pattern edges 4 μm / min ; nonlinear pattern edges 4 μm / min ; nonlinear pattern edges 0.8 μm / min ; smooth ...
Page 497
... Pattern Delineation C. M. MELLIAR - SMITH AND C. J. MOGAB Bell Telephone Laboratories Murray Hill , New Jersey I. Introduction 497 II . Physical and Chemical Phenomena in Low Pressure Plasmas A. Introduction 499 499 B. Methods for ...
... Pattern Delineation C. M. MELLIAR - SMITH AND C. J. MOGAB Bell Telephone Laboratories Murray Hill , New Jersey I. Introduction 497 II . Physical and Chemical Phenomena in Low Pressure Plasmas A. Introduction 499 499 B. Methods for ...
Page 549
... pattern . In the event that some overetching is required to allow for ion flux variations across the beam , ion etching , due to its anisotropic etching rate , will also be less suscepti- ble to undercutting of the resist . It must be ...
... pattern . In the event that some overetching is required to allow for ion flux variations across the beam , ion etching , due to its anisotropic etching rate , will also be less suscepti- ble to undercutting of the resist . It must be ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min