Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 462
... photoresist masks applicable Photoresist mask can be used 507 * , 552 ] [ 518 ] Electrochemica ! polish [ 29 ] Electrochemical polish ; superior surface finish [ 553 ] 1 SHNO ,, 5CH , COOH , 2H2SO ,, H2O as desired Etches Ni and Ni ...
... photoresist masks applicable Photoresist mask can be used 507 * , 552 ] [ 518 ] Electrochemica ! polish [ 29 ] Electrochemical polish ; superior surface finish [ 553 ] 1 SHNO ,, 5CH , COOH , 2H2SO ,, H2O as desired Etches Ni and Ni ...
Page 525
... photoresist due to ion bombardment . ( a ) The photoresist cross section prior to ion beam etching . ( b ) The onset of facet formation in the photoresist . ( c ) The photoresist facet intersects the original substrate surface plane ...
... photoresist due to ion bombardment . ( a ) The photoresist cross section prior to ion beam etching . ( b ) The onset of facet formation in the photoresist . ( c ) The photoresist facet intersects the original substrate surface plane ...
Page 541
... photoresist cross section before etching . ( b ) and ( c ) As etching pro- ceeds facets are formed and coating of the side walls by redeposition takes place . When the remaining photoresist is stripped after etching is completed , ( d ) ...
... photoresist cross section before etching . ( b ) and ( c ) As etching pro- ceeds facets are formed and coating of the side walls by redeposition takes place . When the remaining photoresist is stripped after etching is completed , ( d ) ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min