Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 56
... potential ( V , ) with de glow discharge con- ditions is similar to the variation of the floating potential because parame- ters that increase electron temperature generally increase ion tempera- tures as well . For example , as the ...
... potential ( V , ) with de glow discharge con- ditions is similar to the variation of the floating potential because parame- ters that increase electron temperature generally increase ion tempera- tures as well . For example , as the ...
Page 183
... potential material such as cesium [ 35 ] , and may also be extracted from an off - axis aperture in a duo- plasmatron [ 36 ] . Very high current hydrogen ion beams ( several amperes ) have been generated with a combined duoplasmatron ...
... potential material such as cesium [ 35 ] , and may also be extracted from an off - axis aperture in a duo- plasmatron [ 36 ] . Very high current hydrogen ion beams ( several amperes ) have been generated with a combined duoplasmatron ...
Page 234
John L. Vossen, Werner Kern. to the solution . The potential that results between the metal and the solu- tion is called the electrode potential . Such potentials are found even when no metal is involved in the reac- tions . If He is ...
John L. Vossen, Werner Kern. to the solution . The potential that results between the metal and the solu- tion is called the electrode potential . Such potentials are found even when no metal is involved in the reac- tions . If He is ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min