Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 293
... prepared by this type of reaction : TiO , [ 129-133 ] , ZrO2 [ 134 ] , HfO2 [ 132 , 134 ] , Ta2O5 [ 119 , 135 , 136 ] , Nb2O5 [ 134 ] , and ZnO [ 113 , 137 ] . Metal halide hydrolysis and oxidation are generally effected in the ...
... prepared by this type of reaction : TiO , [ 129-133 ] , ZrO2 [ 134 ] , HfO2 [ 132 , 134 ] , Ta2O5 [ 119 , 135 , 136 ] , Nb2O5 [ 134 ] , and ZnO [ 113 , 137 ] . Metal halide hydrolysis and oxidation are generally effected in the ...
Page 297
... prepared by halide hy- drolysis at 1100-1200 ° C using SiCl ,, ZnCl2 , MnCl2 , H2 , and CO2 [ 204 ] . Even higher temperatures ( 1800-2100 ° C ) were employed reacting combi- nations of SiCl ,, GeCl ,, POCI ,, and SbCl , vapors with O ...
... prepared by halide hy- drolysis at 1100-1200 ° C using SiCl ,, ZnCl2 , MnCl2 , H2 , and CO2 [ 204 ] . Even higher temperatures ( 1800-2100 ° C ) were employed reacting combi- nations of SiCl ,, GeCl ,, POCI ,, and SbCl , vapors with O ...
Page 316
... prepared in single - crystalline or polycrystalline form by the hydrogen reduction of NbC14 - SnCl4 mixtures at 900-1200 ° C [ 376 , 377 ] . Superconductive nitrides of Nb ( NbN , Nb , N5 ) have been deposited by reacting NH , with NbCl ...
... prepared in single - crystalline or polycrystalline form by the hydrogen reduction of NbC14 - SnCl4 mixtures at 900-1200 ° C [ 376 , 377 ] . Superconductive nitrides of Nb ( NbN , Nb , N5 ) have been deposited by reacting NH , with NbCl ...
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Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York