Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 249
... presence of H ions might be plated from aprotic solvents . However , although metals such as Be and Mg have been investigated from this standpoint , only Al deposi- tion has been developed to a semicommercial stage . It must be remem ...
... presence of H ions might be plated from aprotic solvents . However , although metals such as Be and Mg have been investigated from this standpoint , only Al deposi- tion has been developed to a semicommercial stage . It must be remem ...
Page 293
... presence of O2 , has yielded films of B - Fe2O3 [ 158 ] . Poly ( vinyl ferrocene ) at 380 ° C has also been used to deposit Fe2O3 films [ 159 ] . Amorphous Fe2O3 , for use as hard semitransparent coatings on photolithographic glass ...
... presence of O2 , has yielded films of B - Fe2O3 [ 158 ] . Poly ( vinyl ferrocene ) at 380 ° C has also been used to deposit Fe2O3 films [ 159 ] . Amorphous Fe2O3 , for use as hard semitransparent coatings on photolithographic glass ...
Page 355
... presence of an electric discharge ( 350 W at ~ 27 MHz ) at 0.2-0.6 Torr in the apparatus discussed in Fig . 4 [ 9 ] . Epitaxial silicon can be produced , of course , in such an apparatus without an electric discharge at 1050-1200 ° C at ...
... presence of an electric discharge ( 350 W at ~ 27 MHz ) at 0.2-0.6 Torr in the apparatus discussed in Fig . 4 [ 9 ] . Epitaxial silicon can be produced , of course , in such an apparatus without an electric discharge at 1050-1200 ° C at ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min