Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 127
... present in the sputtered film . In the case of the sputter deposited film , the metal thins to 50 % of the flat surface thickness at the step . Both films were deposited without any heating before or during dep- osition . Extreme step ...
... present in the sputtered film . In the case of the sputter deposited film , the metal thins to 50 % of the flat surface thickness at the step . Both films were deposited without any heating before or during dep- osition . Extreme step ...
Page 218
... present in sufficiently small amounts so that they do not unduly inhibit the deposition . Many stabiliz- ers have been proposed , including mercaptobenzothiazole ( MBT ) , thiourea , cyanide ion , vanadium pentoxide , methyl butynol ...
... present in sufficiently small amounts so that they do not unduly inhibit the deposition . Many stabiliz- ers have been proposed , including mercaptobenzothiazole ( MBT ) , thiourea , cyanide ion , vanadium pentoxide , methyl butynol ...
Page 275
... present are the deposition of polycrystalline Si films from SiH , in the temperature range 600-650 ° C , for Si3N4 films from SiH , Cl , and NH , at 750-920 ° C , and for vitreous SiO2 films from SiH2Cl2 and N2O at 910 ° C [ 66 , 67 ] ...
... present are the deposition of polycrystalline Si films from SiH , in the temperature range 600-650 ° C , for Si3N4 films from SiH , Cl , and NH , at 750-920 ° C , and for vitreous SiO2 films from SiH2Cl2 and N2O at 910 ° C [ 66 , 67 ] ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min