Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 156
... pressure below the diffusion - pump forepressure tolerance or at the foreline pressure for maximum throughput [ 76 ] . The throttle mecha- nism then is adjusted to give the approximate sputtering pressure desired . Lastly , the argon ...
... pressure below the diffusion - pump forepressure tolerance or at the foreline pressure for maximum throughput [ 76 ] . The throttle mecha- nism then is adjusted to give the approximate sputtering pressure desired . Lastly , the argon ...
Page 274
... Pressure CVD * The fundaments of depositing films at a low pressure are basically the same as for those deposited near atmospheric pressure . The major differ- ence is the radical change of emphasis that is placed on the rates of mass ...
... Pressure CVD * The fundaments of depositing films at a low pressure are basically the same as for those deposited near atmospheric pressure . The major differ- ence is the radical change of emphasis that is placed on the rates of mass ...
Page 533
... pressure , at a fixed power density . Conversely , as the pressure is reduced the collision frequency will decrease and the concentration of active species will begin to drop at low enough pressure . These limitations fix the useful ...
... pressure , at a fixed power density . Conversely , as the pressure is reduced the collision frequency will decrease and the concentration of active species will begin to drop at low enough pressure . These limitations fix the useful ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min